ZXTC2063E6 document number: ds33648 rev: 3 - 2 1 of 9 www.diodes.com november 2012 ? diodes incorporated ZXTC2063E6 advance information a product line o f diodes incorporated 40v complementary medium power transistor in sot26 features ? npn + pnp combination ? bv ceo > 40 (-40)v ? bv eco > 6 (-3)v ? i cm = 9 (-9)a peak pulse current ? v ce(sat) < 60 (-90)mv @ 1a ? r ce(sat) = 38 (58)m ? ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability description advanced process capability has been used to achieve this high performance device. combining npn and pnp transistors in the sot26 package provides a compact solution for the intended applications. mechanical data ? case: sot26 ? case material: molded plastic, ?green? molding compound ? ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin plated leads, solderable per mil-std-202, method 208 ? weight: 0.015 grams (approximate) applications ? mosfet and igbt gate driving ? motor drive ordering information (note 4) product marking reel size (inches) tape width (mm) quantity per reel ZXTC2063E6ta 2063 7 8 3,000 notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/ for more info rmation about diodes incorporated?s definit ions of halogen and antimony free, "green " and lead-free. 3. halogen and antimony free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm to tal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com marking information 2063 = product type marking code top view device s y mbol sot26 top view pin-out c 1 e 1 b1 c 2 e 2 b2 q1 q2 c 1 b1 c 2 e1 b2 e2 2063
ZXTC2063E6 document number: ds33648 rev: 3 - 2 2 of 9 www.diodes.com november 2012 ? diodes incorporated ZXTC2063E6 advance information a product line o f diodes incorporated maximum ratings ? q1 (npn transistor) (@t a = +25c, unless otherwise specified.) characteristic symbol value unit collector-base voltage v cbo 130 v collector-emitter voltage v ceo 40 v emitter-collector voltage (reverse blocking) v eco 6 v emitter-base voltage v ebo 7 v continuous collector current i c 3.5 a peak pulsed collector current i cm 9 a base current i b 1 a maximum ratings ? q2 (pnp transistor) (@t a = +25c, unless otherwise specified.) characteristic symbol value unit collector-base voltage v cbo -45 v collector-emitter voltage v ceo -40 v emitter-collector voltage (reverse blocking) v eco -3 v emitter-base voltage v ebo -7 v continuous collector current i c -3 a peak pulsed collector current i cm -9 a base current i b -1 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation linear derating factor (notes 5 & 9) p d 0.7 5.6 w mw/ c (notes 6 & 9) 0.9 7.2 (notes 6 & 10) 1.1 8.8 (notes 7 & 9) 1.1 8.8 (notes 8 & 9) 1.7 13.6 thermal resistance, junction to ambient (notes 5 & 9) r ja 179 c/w (notes 6 & 9) 139 (notes 6 & 10) 113 (notes 7 & 9) 113 (notes 8 & 9) 73 thermal resistance, junction to lead (note 11) r jl 87.58 operating and storage temperature range t j , t stg -55 to +150 c notes: 5. for a device surface mounted on 15 mm x 15mm fr4 pcb with high coverage of single sided 1oz copper, in still air condi tions; the device is measured when operating in a steady-state condition. 6. same as note (5), except the device is surface mounted on 25mm x 25mm 1oz copper. 7. same as note (5), except the device is surface mounted on 50mm x 50mm 2oz copper. 8. same as note (7), except the device is measured at t < 5 seconds. 9. for device with one active die, both collectors attached to a common heatsink. 10. for device with two active dice running at equal power, split heatsink 50% to each collector. 11. thermal resistance from junction to sol der-point (at the end of the collector lead).
ZXTC2063E6 document number: ds33648 rev: 3 - 2 3 of 9 www.diodes.com november 2012 ? diodes incorporated ZXTC2063E6 advance information a product line o f diodes incorporated thermal characteristics and derating information 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 70 80 90 100 110 0.1 1 10 10m 100m 1 10 100m 1 10 10m 100m 1 10 npn t amb =25c 50mm x 50mm 2oz fr4 one active die v ce(sat) limit 100s 1ms 10ms 100ms 1s dc safe operating area i c collector current (a) v ce collector-emitter voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 50mm x 50mm 2oz fr4 one active die 50mm x 50mm 2oz fr4 one active die t<5secs 25mm x 25mm 1oz fr4 one active die 25mm x 25mm 1oz fr4 two active die 15mm x 15mm 1oz fr4 one active die derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 1 10 100 safe operating area single pulse t amb =25c 50mm x 50mm 2oz fr4 one active die pulse power dissipation pulse width (s) max power dissipation (w) d=0.1 d=0.05 single pulse d=0.2 d=0.5 t amb =25c 50mm x 50mm 2oz fr4 one active die transient thermal impedance pulse width (s) thermal resistance (c/w) pnp t amb =25c 50mm x 50mm 2oz fr4 one active die 100s 1ms 10ms 100ms 1s dc v ce(sat) limit -v ce collector-emitter voltage (v) -i c collector current (a)
ZXTC2063E6 document number: ds33648 rev: 3 - 2 4 of 9 www.diodes.com november 2012 ? diodes incorporated ZXTC2063E6 advance information a product line o f diodes incorporated electrical characteristics ? q1 (npn transistor) (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics collector-base breakdown voltage bv cbo 130 170 ? v i c = 100 a, i e = 0 collector-emitter breakdown voltage (note 12) bv ceo 40 63 ? v i c = 10ma, i b = 0 emitter-base breakdown voltage bv ebo 7 8.3 ? v i e = 100 a, i c = 0 emitter-collector breakdown voltage (reverse blocking) bv ecx 6 7.4 ? v i e =100a, r bc < 1k ? or 0.25v > v bc > -0.25v emitter-collector breakdown voltage (base open) bv eco 6 7.4 ? v i e = 100a collector cutoff current i cbo ? <1 50 20 na a v cb = 100v v cb = 100v, t a = +100c collector cutoff current i ebo ? <1 50 na v eb = 5.6v on characteristics (note 12) dc current gain h fe 300 280 40 450 400 60 900 ? i c = 10ma, v ce = 2v i c = 1.0a, v ce = 2v i c = 3.5a, v ce = 2v collector-emitter saturation voltage v ce(sat) ? 50 85 150 135 60 110 220 195 mv i c = 1.0a, i b = 100ma i c = 1.0a, i b = 20ma i c = 2.0a, i b = 40ma i c = 3.5a, i b = 350ma base-emitter saturation voltage v be ( sat ) ? 960 1050 mv i c = 3.5a, i b = 350ma base-emitter turn-on voltage v be ( on ) ? 860 950 mv i c = 3.5a, v ce = 2v small signal characteristics output capacitance c obo ? 12 20 pf v cb = 10v, f = 1.0mhz current gain-bandwidth product f t ? 190 ? mhz v ce = 10v, i c = 50ma, f = 100mhz delay time t d ? 64 ? ns v cc = 10v, i c = 1a, i b1 = i b2 = 10ma rise time t r ? 108 ? ns storage time t s ? 428 ? ns fall time t f ? 130 ? ns notes: 12. measured under pulsed conditions. pulse width 300 s. duty cycle 2%.
ZXTC2063E6 document number: ds33648 rev: 3 - 2 5 of 9 www.diodes.com november 2012 ? diodes incorporated ZXTC2063E6 advance information a product line o f diodes incorporated electrical characteristics ? q2 (pnp transistor) (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics collector-base breakdown voltage bv cbo -45 -80 ? v i c = -100 a, i e = 0 collector-emitter breakdown voltage (note 12) bv ceo -40 -65 ? v i c = -10ma, i b = 0 emitter-base breakdown voltage bv ebo -7 -8.3 ? v i e = -100 a, i c = 0 emitter-collector breakdown voltage (reverse blocking) bv ecx -6 -7.4 ? v -i e = 100a, r bc < 1k ? or 0.25v < v bc < -0.25v emitter-collector breakdown voltage (base open) bv eco -3 -8.7 ? v i e = -100a collector cutoff current i cbo ? ? <1 -50 -20 na a v cb = -36v v cb = -36v, t a = +100c collector cutoff current i ebo ? <1 -50 na v eb = -5.6v on characteristics (note 12) dc current gain h fe 300 200 20 450 280 50 900 ? ? ? i c = -10ma, v ce = -2v i c = -1.0a, v ce = -2v i c = -3.0a, v ce = -2v collector-emitter saturation voltage v ce(sat) ? ? ? -70 -195 -175 -90 -290 -260 mv i c = -1.0a, i b = -100ma i c = -1.0a, i b = -20ma i c = -3.0a, i b = -300ma base-emitter saturation voltage v be ( sat ) ? -935 -1000 mv i c = -3.0a, i b = -300ma base-emitter turn-on voltage v be ( on ) ? -855 -950 mv i c = -3.0a, v ce = -2v small signal characteristics output capacitance c obo ? 17 25 pf v cb = -10v, f = 1.0mhz current gain-bandwidth product f t ? 270 ? mhz v ce = -10v, i c = -50ma, f = 100mhz delay time t d ? 57 ? ns v cc = -10v, i c = -1a, i b1 = i b2 = -10ma rise time t r ? 69 ? ns storage time t s ? 154 ? ns fall time t f ? 60 ? ns notes: 12. measured under pulsed conditions. pulse width 300 s. duty cycle 2%.
ZXTC2063E6 document number: ds33648 rev: 3 - 2 6 of 9 www.diodes.com november 2012 ? diodes incorporated ZXTC2063E6 advance information a product line o f diodes incorporated typical electrical characteris tics ? q1 (npn transistor) (@t a = +25c, unless otherwise specified.) 1m 10m 100m 1 10 1m 10m 100m 1 10m 100m 1 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 0 75 150 225 300 375 450 525 600 675 750 825 i c /i b =100 v ce(sat) v i c tamb=25c i c /i b =50 i c /i b =20 i c /i b =10 v ce(sat) (v) i c collector current (a) 150c v be(sat) v i c i c /i b =10 100c 25c -55c v ce(sat) (v) i c collector current (a) 150c h fe v i c v ce =2v -55c 25c 100c normalised gain i c collector current (a) 150c 25c v ce(sat) v i c i c /i b =10 100c -55c v be(sat) (v) i c collector current (a) 150c v be(on) v i c v ce =2v 100c 25c -55c v be(on) (v) i c collector current (a) typical gain (h fe )
ZXTC2063E6 document number: ds33648 rev: 3 - 2 7 of 9 www.diodes.com november 2012 ? diodes incorporated ZXTC2063E6 advance information a product line o f diodes incorporated typical electrical characteris tics ? q2 (pnp transistor) (@t a = +25c, unless otherwise specified.) 1m 10m 100m 1 10 10m 100m 1 10m 100m 1 0.0 0.1 0.2 0.3 0.4 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 1.2 0 100 200 300 400 500 600 700 800 i c /i b =100 v ce(sat) v i c tamb=25c i c /i b =50 i c /i b =20 i c /i b =10 - v ce(sat) (v) - i c collector current (a) 100c v be(sat) v i c i c /i b =10 150c 25c -55c - v ce(sat) (v) - i c collector current (a) 150c h fe v i c v ce =2v -55c 25c 100c normalised gain - i c collector current (a) 150c 25c v ce(sat) v i c i c /i b =10 100c -55c - v be(sat) (v) - i c collector current (a) 150c v be(on) v i c v ce =2v 100c 25c -55c - v be(on) (v) - i c collector current (a) typical gain (h fe )
ZXTC2063E6 document number: ds33648 rev: 3 - 2 8 of 9 www.diodes.com november 2012 ? diodes incorporated ZXTC2063E6 advance information a product line o f diodes incorporated package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. sot26 dim min max typ a 0.35 0.50 0.38 b 1.50 1.70 1.60 c 2.70 3.00 2.80 d ? ? 0.95 h 2.90 3.10 3.00 j 0.013 0.10 0.05 k 1.00 1.30 1.10 l 0.35 0.55 0.40 m 0.10 0.20 0.15 0 8 ? all dimensions in mm dimensions value (in mm) z 3.20 g 1.60 x 0.55 y 0.80 c1 2.40 c2 0.95 a m j l d b c h k x z y c1 c2 c2 g
ZXTC2063E6 document number: ds33648 rev: 3 - 2 9 of 9 www.diodes.com november 2012 ? diodes incorporated ZXTC2063E6 advance information a product line o f diodes incorporated important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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